PART |
Description |
Maker |
SIGC121T120R2CL |
IGBTs - HV Chips - SIGC121T120R2CL, 1200V, 75A
|
Infineon
|
SIGC121T120R2CS |
IGBTs - HV Chips - SIGC121T120R2CS, 1200V, 75A
|
Infineon
|
SIGC101T170R3 |
IGBTs - HV Chips - SIGC101T170R3, 1700V, 75A
|
Infineon
|
SIGC109T120R3 |
IGBTs - HV Chips - SIGC109T120R3, 1200V, 100A
|
Infineon
|
Q67041-S2856-A001 Q67041-S2856-A002 SIGC18T60SNC S |
IGBTs - HV Chips - SIGC18T60SNC, 600V, 20A IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes Fast IGBT in NPT-technology IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技 IGBTs & DuoPacks - 20A 600V TO220 IGBT IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG http:// Infineon Technologies A...
|