| PART |
Description |
Maker |
| SIGC05T60SNC |
IGBTs - HV Chips - SIGC05T60SNC, 600V, 4A
|
Infineon
|
| SIGC07T60NC |
IGBTs - HV Chips - SIGC07T60NC, 600V, 6A
|
Infineon
|
| SIGC121T120R2CS |
IGBTs - HV Chips - SIGC121T120R2CS, 1200V, 75A
|
Infineon
|
| SIGC101T170R3 |
IGBTs - HV Chips - SIGC101T170R3, 1700V, 75A
|
Infineon
|
| SIGC156T120R2C BSM100GD120DN2 ECONOPACK3 Q67041-A4 |
IGBTs - HV Chips - SIGC156T120R2C, 1200V, 100A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
