| PART |
Description |
Maker |
| K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N401801B-QC13 K7N403601B-QC13 K7N403601B-QI13 K7 |
128Kx36 & 256Kx18 Pipelined NtRAM
|
http://
Samsung semiconductor
|
| KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
| K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| K7B403625M |
128Kx36-Bit Synchronous Burst SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| L29C520JC22 |
4 x 8-bit multilevel pipeline register. Speed 22 ns
|
LOGIC Devices Incorporated
|
| L29C520 L29C521PC22 L29C520PC22 L29C521 |
4 x 8-bit Multilevel Pipeline Register(4 x 8位多级流水线寄存
|
LOGIC Devices Incorporated
|
| MB91F465KBPMT-GSE2 MB91F465KA MB91F465KAPMT-GSE2 |
32-bit RISC, load/store architecture, five-stage pipeline
|
Cypress Semiconductor
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
