| PART |
Description |
Maker |
| BF98808 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
| BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| ALD114813PCL ALD114813SCL ALD11481312 ALD114913 |
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
|
Advanced Linear Devices
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| S525T S525 |
N?Channel MOS-Fieldeffect Triode, Depletion Mode
From old datasheet system
N-Channel MOS-Fieldeffect Triode, Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE
|
Vishay Telefunken
|
| CPC3980 CPC3980Z CPC3980ZTR |
N-Channel Depletion-Mode
|
IXYS Corporation
|
| TSM126CXRFG |
N-Channel Depletion-Mode MOSFET
|
Taiwan Semiconductor Co...
|
| CPC3730 CPC3730C |
N-Channel Depletion-Mode FET
|
Clare, Inc.
|
| CPC5603C CPC5603CTR |
N-Channel Depletion Mode FET
|
Clare, Inc.
|
| DN3135NW |
N-Channel Depletion-Mode Vertical DMOS FETs N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| CPC3703CTR CPC3703 CPC3703C |
N-Channel Depletion-Mode Vertical DMOS FETs
0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Clare, Inc.
CLARE INC
|
|
