| PART |
Description |
Maker |
| G13-00J G20-00A |
SWITCH SNAP PLAST SPDT .1A QC
SNAP ACTING/LIMIT SWITCH, DPDT, MOMENTARY, 3.3mm, PANEL MOUNT
|
THE CHERRY CORP
|
| KSE13005H1A |
4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| KSC2333Y |
2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| KSC2517OJ69Z |
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| SGP10N60RUFTU |
16 A, 600 V, N-CHANNEL IGBT, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| STP11NB40 STP11NB40FP 5322 |
N-Channel 400V-0.48惟-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N娌??MOSFET)
N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET
From old datasheet system
N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10.7A - TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| BCR8UM BCR8UM-12 |
600 V, 8 A, TRIAC, TO-220 TO-220, 3 PIN
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 中功率使用绝缘型，玻璃钝化型
|
Central Semiconductor, Corp.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 3310H-125-102 3310C-001-102 3310H-025-503 3310H-02 |
POT 2K OHM 9MM SQ RTANG PLAST RESISTOR, POTENTIOMETER, CONDUCTIVE PLASTIC, 1 TURN(S), 0.25 W, 2000 ohm
Square Sealed Panel Control RESISTOR, POTENTIOMETER, CONDUCTIVE PLASTIC, 1 TURN(S), 0.25 W, 10000 ohm
|
Bourns Inc.
Bourns, Inc.
|
| STP3NB100 STP3NB100FP 6249 |
N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N沟道MOSFET) N沟道1000V -5.3Ω- 3A条，TO-220/TO-220FP PowerMESH MOSFET的（不适用沟道MOSFET的）
N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET
From old datasheet system
|
Bel Fuse, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
|
