| PART |
Description |
Maker |
| IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory)
HIGH SPEED 64K (4K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| LUCL9311AP-DT LUCL9311GP-D LUCL9311GP0DT |
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance, Ringing Relay,and GR-909 Test Access
|
http://
|
| MH88437 MH88437-P MH88437AD-P MH88437AD-PI MH88437 |
0.3-6.0V; data access arrangement. For FAX/modem, electronic point of sale, security system
Data Access Arrangement Advance Information 数据访问安排进展信息
|
Mitel Semiconductor
Mitel Networks Corporation
Mitel Networks, Corp.
|
| SDA9253 SDA9253GEG |
2.6Mbit Dynamic Sequential Access Mem...
2.6 MBit Dynamic Sequential Access Memory for Television Applications (TV-SAM)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| LUCL9311GP0DT L9311 LUCL9311AP-D LUCL9311AP-DT LUC |
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance, Ringing Relay,and GR-909 Test Access
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance/ Ringing Relay/and GR-909 Test Access
|
AGERE[Agere Systems]
|
| 7106L-QM1-Y 7106G-QM1-Y 7106L-D40-T 7106G-R40-T 71 |
3 ? DIGIT, LCD DISPLAY, A/D CONVERTERS
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDSO40
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDIP40
|
UNISONIC TECHNOLOGIES CO LTD
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ICL7109C/D ICL7109CQH ICL7109CPL |
Dual LVDS Receiver 5-SOT-23 -40 to 85 1-CH 12-BIT DUAL-SLOPE ADC, PARALLEL ACCESS, PDIP40
12 Bit A/D Converter With 3-State Binary Outputs 1-CH 12-BIT DUAL-SLOPE ADC, PARALLEL ACCESS, PQCC44
|
Maxim Integrated Products, Inc.
|
