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IGB30N60H3 -    600V high speed switching series third generation

IGB30N60H3_8773043.PDF Datasheet


 Full text search :    600V high speed switching series third generation
 Product Description search :    600V high speed switching series third generation


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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2075SERIES 2075-2000 2075-1000 2075-300 2075-3000 Delay 5000 /-100 ns, fixed high B.W. line Tr
Delay 500 /-20 ns, fixed high B.W. line Tr
Delay 4000 /-80 ns, fixed high B.W. line Tr
Delay 3000 /-60 ns, fixed high B.W. line Tr
Delay 300 /-20 ns, fixed high B.W. line Tr
Delay 1000 /-20 ns, fixed high B.W. line Tr
Delay 2000 /-40 ns, fixed high B.W. line Tr
FIXED HIGH B.W. DELAY LINE TR 1ns
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