| PART |
Description |
Maker |
| UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER
MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
|
| A3134LUA A3134UA A3134LT A3134 3134 A3134U 3132 31 |
A1201, A1202, A1203, and A1204 Next-Generation Continuous-Time Bipolar Switch Family
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
LED 3MM BI-LEVEL BLUE DIFF 双极霍尔效应开关高温作
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| 3260 A3260UA-TL A3260LH A3260LT A3260UA A3260 A326 |
2-wire chopper-stabbilzed,precision hall-effect bipolar switch
320 x 240 pixel format, CFL backlight available with power harness
2-Wire,Chopper-Stabilized, Precision Hall Effect Bipolar Switch(2斩波稳定，精密霍尔效应双极开
2-WIRE/ CHOPPER-STABILIZED/ PRECISION HALL-EFFECT BIPOLAR SWITCH
2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-EFFECT BIPOLAR SWITCH
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| NE576N NE576D SA576N NE576 SA576 SA576D |
COMPANDER,BIPOLAR,DIP,14PIN,PLASTIC
COMPANDER,BIPOLAR,SOP,14PIN,PLASTIC
From old datasheet system
Low Power Compandor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G MMJT |
PNP Bipolar Power Transistor
Bipolar Power Transistors PNP Silicon
|
ONSEMI[ON Semiconductor]
|
| 2N2890 |
Bipolar NPN Device in a Hermetically sealed TO39
Bipolar NPN Device.
|
Seme LAB
SEMELAB
|
| CA3240 CA3240A CA3240AE CA3240AE1 CA3240E |
Op Amp, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, Low Bias, 4.5MHz
Op Amp, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, 4.5MHz
Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output
|
INTERSIL[Intersil Corporation]
|
| CPH6223-TL-E |
Bipolar Transistor
Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
| TA31142FN TA31142F |
IF AMPLIFIER,BIPOLAR,SSOP,20PIN,PLASTIC
IF AMPLIFIER,BIPOLAR,SOP,20PIN,PLASTIC
From old datasheet system
|
Toshiba America Electronic Components, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| ESM1602B ESM1602BFP |
VOLT COMPARATOR,QUAD,BIPOLAR,DIP,14PIN,PLASTIC
VOLT COMPARATOR,QUAD,BIPOLAR,SOP,16PIN,PLASTIC
From old datasheet system
|
ST Microelectronics
|
