Part Number Hot Search : 
10100F TBN08 8CN10N P3098LS 13023 MIC5305 STB657F KPY54RK
Product Description
Full Text Search

KBP310 -    High current capability

KBP310_8696638.PDF Datasheet

 
Part No. KBP310
Description    High current capability

File Size 224.32K  /  2 Page  

Maker

DIYI Electronic Technol...



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: KBP310G
Maker: TSC
Pack: 扁桥
Stock: Reserved
Unit price for :
    50: $0.22
  100: $0.21
1000: $0.20

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ KBP310 Datasheet PDF Downlaod from Datasheet.HK ]
[KBP310 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for KBP310 ]

[ Price & Availability of KBP310 by FindChips.com ]

 Full text search :    High current capability
 Product Description search :    High current capability


 Related Part Number
PART Description Maker
Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
FS1UM-16A Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
LRC12JTRWAR010 LRC10JTRWAR010 LRC06JTRWAR010 LRC12 Chip Current Sense / Open-Air Current Shunts / Axial Current Sense Resistors
Token Electronics Industry Co., Ltd.
STK1040 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA

BZY91C9V1R BZY91 BZY91C10 BZY91C10R BZY91C11 BZY91 Standard Recovery Rectifier; Forward Current:150A; Forward Current Avg Rectified, IF(AV):150A; Forward Surge Current Max, Ifsm:3000A; Package/Case:DO-8 (Reverse); Repetitive Reverse Voltage Max, Vrrm:1400V; Current, It av:150A RoHS Compliant: Yes
Zeners/Studs 齐纳基准螺栓
http://
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
KPY32-RK Q62705-K266 Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance.
0.5W SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
PC 4/ 5-ST-7,62 .5W硅稳压二极管
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
Semtech, Corp.
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic D...
MG360V1US41 E002277 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
Toshiba Corporation
Toshiba Semiconductor
PBA600F-15 PBA600F-24 PBA600F-36 PBA600F-12    40/40typ (Io=100%) (Primary inrush current /Secondary inrush current) (More than 3 sec. to re-start)
   AC3,000V 1minute, Cutoff current = 10mA, DC500V 50MWmin (At Room Temperature)
Total Power Internation...
74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
NXP Semiconductors N.V.
XL6003 400KHz 60V 2A Switching Current Boost LED Constant Current Driver
XLSEMI
XL6005 180KHz 60V 4A Switching Current Boost LED Constant Current Driver
XLSEMI
 
 Related keyword From Full Text Search System
KBP310 size KBP310 pnp KBP310 gain KBP310 chip KBP310 precision
KBP310 rectifier KBP310 Marin KBP310 Circuit KBP310 corp KBP310 external rom
 

 

Price & Availability of KBP310

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.7373900413513