PART |
Description |
Maker |
1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier 1000V, 1.0A glass passivated rectifier 50V, 1.0A glass passivated rectifier 200V, 1.0A glass passivated rectifier 100V, 1.0A glass passivated rectifier 600V, 1.0A glass passivated rectifier 800V, 1.0A glass passivated rectifier
|
http:// WTE[Won-Top Electronics]
|
DF15005S DF1501S |
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS SINGLE-PHASE GLASS BRIDGE
|
CHENG-YI ELECTRONIC CO., LTD.
|
BYV27100 BYV27150 BYV27200 BYV2750 BYV27 DIODESINC |
200V; 2.0A super-fast glass body rectifier 150V; 2.0A super-fast glass body rectifier 100V; 2.0A super-fast glass body rectifier 2.0A SUPER-FAST GLASS BODY RECTIFIER 安培的电流超快速整流玻璃钢车身
|
DIODES[Diodes Incorporated] Diodes Inc. Diodes, Inc.
|
DO-204AH 1N5918B MZ4625 BZX79C7V5RL BZX79C10 BZX79 |
500 mW DO-35 Glass Zener Voltage Regulator Diodes 500mWDO-35GlassZenerVoltageRegulatorDiodes
GLASS ZENER DIODES 500 MILLIWATTS 1.8.200 VOLTS
|
MOTOROLA[Motorola, Inc] EIC discrete Semiconductors Motorola Inc
|
FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥 Bridge Rectifiers (Power) 桥式整流器(电力 10 Amp Glass Passivated Bridge Rectifier 10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
|
HER30-1500G |
Fast Recovery Pack: DO-201AD ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
1R5GU41 |
Ultra Fast Recovery Pack: DO-15 ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞400V CURRENT拢潞1.5A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT?.5A
|
Gulf Semiconductor
|
GP10M GP10A GP10B GP10D GP10G GP10J GP10K |
1.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x9 mm; Packaging: Bulk Glass Passivated Junction Rectifiers 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Compon... MCC[Micro Commercial Components] Micro Commercial Components Corp. Micro Commercial Components, Corp.
|
LA120X1-1 LA120X1_2-1 LA120X10-1 LA120X15-1 LA120X |
Fuses, 5A 250V F IEC GLASS LEAD LA120X半导体保险丝 Fuses, 3.15A 250V F IEC GLASS 5X20 LA120X Semiconductor Fuses
|
Littelfuse, Inc. LITTELFUSE[Littelfuse]
|
GDZJ3.0 GDZJ4.3 GDZJ2.7 GDZJ2.0 GDZJ2.2 GDZJ2.4 GD |
5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2 AXIAL LEAD ZENER DIODES
|
Pan Jit International I... Rohm Co., Ltd. Diodes, Inc. NXP Semiconductors N.V. Pan Jit International Inc.
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|