| PART |
Description |
Maker |
| LM10BW10 |
High Density Polyethylene
|
Cynergy3 Co
|
| ISPLSI1048C ISPLSI1048C-50LG_883 1048C ISPLSI1048C |
Shielded Paired Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Number of Pairs:5; Leaded Process Compatible:Yes; Drop Ship:Yes RoHS Compliant: Yes
In-System Programmable High Density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD
2.5V In-System Programmable SuperFAST?/a> High Density PLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD
CRYSTAL 24.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| LC4128X LC4256ZC-45M132C1 LC4256ZC-75M132C1 LC4032 |
3.3V/2.5V/1.8V在系统可编程超快高密PDLs
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 4.2 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 3.7 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs
|
Lattice Semiconductor Corporation
http://
Lattice Semiconductor, Corp.
|
| PC816CD PC616C PC816BD PC816AB PC816AC PC846 PC816 |
Hgh Collector-emitter Voltage, Hgh Density Mounting Type Photocoupler
Hgh -w=der Vtige Hgh Density Mounting Type Photocoupler
Hgh -w=der Vtige/ Hgh Density Mounting Type Photocoupler
High Collector-Emitter Voltage High Density Mounting Type Photocoupler(259.15 k)
Hgh -w=der Vtige, Hgh Density Mounting Type Photocoupler 杭州到瓦特\u003dVtige，生长激素密度安装类型光电耦合
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
Sharp, Corp.
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
