| PART |
Description |
Maker |
| S3901-FX-15 |
Image sensor highly sensitive to X-rays from 10 k to 100 keV
|
Hamamatsu Corporation
|
| ERJUP8D1002V ERJUP8D1003V ERJUP8D1020V ERJUP8D1051 |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type
|
Panasonic
|
| NT90TPHBSDC3VCB0.9 NT90TPHCSDC3VCB0.6 NT90TPHCSDC3 |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life.
|
http://
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
|
| MCP103 MCP121 MCP131 |
The MCP103 Series are CMOS voltage supervisors are well suited for many portable and consumer electrics applications due to the extremely ...
The MCP121 Series of CMOS voltage detectors are well suited for many portable and consumer electrics applications due to the extremely ...
The MCP131 Series, of CMOS voltage supervisors, are well suited for portable and consumer electrics applications due to the extremely ...
|
Microchip
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0406-25F IPT0406-18F |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IPT1208-SEB IPT1208-TEB IPT1208-CEB IPT1208-BEB |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| 78184 78162 78182 78161 |
TAPE ANTI-SKID FLUORESCENT ORANGE
GLOW IN THE DARK DIECUT
REFLECTIVE DIECUT CLEAT PK24
TAPE ANTI-SKID FLUORESCENT GREEN 带防滑发出绿色荧
|
Jameco Electronics
|
| MCRF250 MCRF250-I_WFQ23 MCRF250-I_P MCRF250-I_S MC |
The MCRF250 is one time contactlessly programmable passive Radio Frequency Identification (RFID) IC device with advanced anti-collision features. The device is powered by an external RF transmitter (reader) through inductive coupling. The
125 kHz microID Passive RFID Device with Anti-Collision
From old datasheet system
|
MICROCHIP[Microchip Technology]
|
