PART |
Description |
Maker |
GX0S6D104MA7D GX0S6D104MA7D-1000 GX0S6D104MA7D-500 |
Ultra Broad Band Capacitor
|
AVX Corporation
|
GL6R0KA7B |
Ultra Broad Band Inductor
|
AVX Corporation
|
ANT5220110A0T |
Broad Band Ceramic Antenna
|
Walsin
|
GX02 |
GX Series Ultra Broad Band Capacitor
|
AVX Corporation
|
TIM7785-12UL |
BROAD BAND INTERNALLY MATCHED FET
|
Toshiba Semiconductor
|
MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF210 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
|
STB7101TR STB7101 7518 101 -STB7101TR |
0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIER From old datasheet system
|
ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
|
MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
WSR2 WSR25L000FEA WSR21R000FTA WSR25L000FEK WSR2R0 |
Power Metal Strip? Resistors, Low Value (down to 0.001 ?, Surface Mount Power Metal Strip Resistors, Low Value (down to 0.001 ?, Surface Mount Metal Strip/Wire Resistor, RESISTOR, CURRENT SENSE, METAL STRIP, 2 W, 1 %, 110 ppm, 0.005 ohm, SURFACE MOUNT, 4527, CHIP, GREEN 2W,.02,1%,T/R - Tape and Reel
|
Vishay Siliconix Vishay Dale
|
GX03 GX035C104MAT2 |
Ultra Broad Band Capacitor Ultra-Broadband performance
|
AVX Corporation
|