| PART |
Description |
Maker |
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
| PTFC261402FC |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ?2690 MHz
|
Cree, Inc
|
| PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 ?770 MHz
|
Infineon Technologies AG
|
| PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
| PTFA041501HL PTFA041501GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz
|
Infineon Technologies AG
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
