| PART |
Description |
Maker |
| DN8796MS |
3 V operation Hall IC, Alternating magnetic field operation
|
Panasonic
|
| DN8797MS |
3V operation Hall IC One-way magnetic field operation
|
PANASONIC[Panasonic Semiconductor]
|
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| LV3403M |
3V Operation Filter for FM Multiplex Broadcasting Reception(用于FM多路广播接收3V运算滤波 3V操作过滤器（用于调频多路广播接收3V的运算滤波器的调频广播接收多路）
3V Operation Filter for FM Multiplex Broadcasting Reception(用于FM多路广播接收V运算滤波
3 V Operation Filter for FM Multiplex Broadcasting Reception
Bi-CMOS LSI
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
| 285D07 285D126X0250F2 285D126X9250C0 285D126X9250C |
Tantalum-Cased-Tantalum Sintered Anode TANTALEX㈢ Capacitors for Operation to 125 ∑C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX? Capacitors for Operation to 125 °C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX庐 Capacitors for Operation to 125 掳C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX垄莽 Capacitors for Operation to 125 隆?C
|
Vishay Siliconix
|
| DDZ21 DDZ23 DDZ24C DDZ27D DDZ6V2B DDZ6V8C DDZ5V6B |
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Diodes
SURFACE MOUNT PRECISION ZENER DIODE
LED 7-SEG .56 RED 632NM CC
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| EPC1064 EPC1 EPC1213 EPC1441 EPC1441XXX EPC1064PC8 |
Configuration devices for SRAM-based LUT devices, 440,800 1-bit device with 5.0-V or 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 5.0-V operation
Configuration devices for SRAM-based LUT devices, 212,942 1-bit device with 5.0-V operation
|
Altera Corporation
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| SMHF2815D SMHF2805S SMHF2812S SMHF283R3S SMHF2812D |
Fully qualified to Class H or K -55掳C to 125掳C operation 16 to 40 VDC input
Fully qualified to Class H or K -55°C to 125°C operation 16 to 40 VDC input
|
Interpoint Corporation Company
Interpoint Corporation ...
|
