PART |
Description |
Maker |
EM484M1644VTA-55L |
64Mb SDRAM
|
Electronic Theatre Controls, Inc.
|
MT48LC4M16A2P-6A |
64Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC |
64Mb K-die SDRAM
|
SAMSUNG[Samsung semiconductor]
|
W3DG7216V7D2 W3DG7216V75D2 W3DG7216V10D2 W3DG7216V |
64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
White Electronic Designs Corporation
|
V43658Y04VATG-75 |
64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 64Mb H-die (x32) SDRAM Specification 64芯片(X32号)内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HB52E88EM HB52E89EM |
64 MB Unbuffered SDRAM DIMM(64MB 未缓冲同步DRAM DIMM)
|
Hitachi,Ltd.
|
ELM7SU04B |
CMOS LOGIC IC Unbuffer Inverter
|
ELM Technology Corporation
|
ELM7SHU04TB-EL ELM7SHU04MB-EL ELM7SHU04MBEL ELM7SH |
HIGH SPEED CMOS LOGIC IC ELM7SHU04xB Unbuffer Inverter
|
ELM Electronics ELM Technology Corporation
|
TC7SAU04F TC7SAU04FU |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Inverter (unbuffer) with 3.6 V Tolerant Input
|
Toshiba Semiconductor
|
K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronics
|