PART |
Description |
Maker |
4082F |
Flash Memory Cell Parametric Test System
|
Keysight Technologies
|
AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash. 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory 1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory AC 12C 12#12 SKT RECP JT 100C 100#22D SKT RECP AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash. AC 6C 3#16 3#4 SKT RECP Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8)单2.7伏电池电压⑩闪存 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
ML2502 |
128Kbit Analog Cell Storage Flash Memory Revision 8.0 Apr. 01, 1999
|
OKI[OKI electronic componets]
|
CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory 70ns 1M-bit CMOS flash memory 55ns 1M-bit CMOS flash memory 45ns 1M-bit CMOS flash memory 1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor http://
|
MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd. Fujitsu Component Limited.
|
M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|
TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
|
NUMONYX Intel Corporation
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
LH28F160S5 LH28F160S5-L10 LH28F160S5-L70 LH28F160S |
LH28F160S5D-L70 16MBIT (2MB x 8/1MB x 16)Smart 5 Flash Memory 16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY 16-MBIT (2MBx8/1MBx16) Smart 5 Flash MEMORY
|
SHARP[Sharp Electrionic Components]
|