| PART |
Description |
Maker |
| MACS-007801-0M1R1V |
Mono Voltage Controlled Doppler Transceiver 24.125 GHz
|
M/A-COM Technology Solutions, Inc.
|
| IQS622 |
Unique combination of sensing:Capacitive sensing
|
List of Unclassifed Man...
|
| SP6001-0XUTG-1 SP6002-0XUTG-1 |
LCD and camera interfaces in mobile devices are vulnerable to EMI from the cellular band
|
Littelfuse
|
| IDT70V05L15GI IDT70V05L20GI IDT70V05L35GI IDT70V05 |
8K x 8 3.3v Dual-Port RAM
Part Sensing Light Screen; Light Curtain Type:Parts Sensing; Control Output Type:NPN & PNP; Protection Height:67mm; Sensing Range Max:2m; Supply Voltage Max:30VDC; Sensing Range Min:150mm; Supply Voltage:30VDC
High Speed JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
Dual OpAmp With Internal Reference 8-SOIC -40 to 105
20V N & P-Channel PowerTrench MOSFETs
HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM 8K X 8 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM 8K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| MINISMDC110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| MICROSMD200F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
