| PART |
Description |
Maker |
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co.,LTD.
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| FHR2-T238 FHR2-T2381R1G FHN2-T238 FNR4-T238 FHR4-T |
High Stability Extremely Low Ohm Rating 高稳定性极低的电阻额定
|
http://
Willow Technologies Ltd
Willow Technologies Limited
Willow Technologies, Ltd.
|
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CMLTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
