| PART |
Description |
Maker |
| H5N2522FP-E0-E-15 |
250V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A
250V N-Channel B-FET / Substitute of IRF624 & IRF624A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT8075BVR APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| 2SK2053 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS type field effect transistor
|
NEC[NEC]
Toshiba Semiconductor
|
| NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC]
Cypress Semiconductor, Corp.
|
| 2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SJ540 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
