PART |
Description |
Maker |
IRGBC20F |
600V Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
IRG4BC30FD1 |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRF[International Rectifier]
|
IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
FS1209BH00TU FS1209DH00TU FS1209MH00TU FS1209NH00T |
12 A, 200 V, SCR, TO-220AB 12 A, 400 V, SCR, TO-220AB 12 A, 600 V, SCR, TO-220AB 12 A, 800 V, SCR, TO-220AB
|
|
IRGBC30KD2 |
600V Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT
|
IRF[International Rectifier]
|
Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五(DRM)的| 8A条口(T)的有效值| TO - 220AB现有 TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五(DRM)的| 8A条口T)的有效值| TO - 220AB现有 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五(DRM)的| 4A条口(T)的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp. Littelfuse, Inc.
|
SUP85N04-04-E3 |
85 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Vishay Intertechnology, Inc.
|