| PART |
Description |
Maker |
| IS61QDP2B41M36A2 IS61QDP2B41M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S3236T4C K7S3218T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7S3218U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7I323682C K7I321882C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7B323635C K7B323635C-PC750 |
1Mx36 & 2Mx18 Synchronous SRAM
1M X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Samsung semiconductor
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
