PART |
Description |
Maker |
RJK4532DPD |
450V - 4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
2SK2055 D11226EJ1V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|
TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor ETC[ETC] List of Unclassifed Manufacturers
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET Switching (200V, 3A) From old datasheet system
|
ROHM[Rohm]
|