| PART |
Description |
Maker |
| MPXH6300A MPXH6300A6T1 MPXH6300AC6T1 MPXH6300AC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor
HIGH TEMPERATURE ACCURACY INTEGRATED SILICON PRESSURE SENSOR ABSOLUTE, PEIZORESISTIVE PRESSURE SENSOR, 2.9-44.09Psi, 1.5%, 0.30-4.91V, SQUARE, SURFACE MOUNT
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| BYZ35A22 BYZ35A2207 BYZ35A47 BYZ35K22 BYZ35K47 |
Silicon-Protectifiers with TVS characteristic - High Temperature Diodes
|
Diotec Semiconductor
|
| MPXHZ6250A MPXHZ6250A6T1 MPXHZ6250A6U MPXHZ6250AC6 |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| MPXV5050V |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| MPXH6250A09 |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| GB01SHT06-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
