| PART |
Description |
Maker |
| 1214-800P |
800 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| V48A3V3C75B V48C3V3C75B V48C3V3T75B V48A3V3H75B V4 |
48Vin / 3.3Vout / 75Watts DC-DC Converter Module
|
VICOR[Vicor Corporation]
|
| APA18T12 APA18T12-9 APA18T12-9H |
12Vin, 75Watts, Non-isolated DC - DC POL SIP Converter
|
Astec America, Inc
|
| PM50RVA120 |
CAP-ARRAY 470PF 50V 20% X7R 4-ELEMENT SMD-0612 SN100 TR-7-PL
Intellimod⑩ Module Three Phase Brake IGBT Inverter Output (50 Amperes/1200 Volts)
Intellimod Module Three Phase Brake IGBT Inverter Output (50 Amperes/1200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| SB80-05H SB80-05 |
Schottky Barrier Diode (Twin TYpe Cathode Common) 50V, 8A Rectifier
50V/ 8A Rectifier
50V, 8A Rectifier 50V8A条整流器
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|资深大律师，71VAR
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 100mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 50mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Air Cost Control
Delta Electronics, Inc.
Yageo, Corp.
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Intel, Corp.
Diodes, Inc.
|
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 0500DP44A1215 |
1200 /1200 MHz Diplexer (BPF/BRF)
|
Johanson Technology Inc.
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| SDR1212CTJ SDR1210CTJ SDR1212DRJ |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| DTC143ZAA DTC114GFA DTC124GFA DTC115GFA DTC123YFA |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 30mA的一（c）|2VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 500NA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
|
Samsung Semiconductor Co., Ltd.
Rohm Co., Ltd.
|
| APT25GT120BRDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
