PART |
Description |
Maker |
HVV1011-075L |
75Watts, 50v, 1200-1400MHz
|
Advanced Semiconductor
|
1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz 700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
V375C3V3T75B V375A3V3C75B V375A3V3H75B V375A3V3M75 |
375Vin / 3.3Vout / 75Watts DC-DC Converter Module
|
VICOR[Vicor Corporation]
|
CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
SB20W05V |
Schottky Barrier Diode (Twin Type Cathode Common) 50V, 2A Rectifier 50V 2A Rectifier 50V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
12062R103K9AB 12062R104K9AB 2.23891E11 12062R823K8 |
KONDENSATOR 0.01UV 50V 10ST KONDENSATOR 0.1UF 50V 10ST CAPACITOR 10000PF 25V KONDENSATOR 25V 82NF KONDENSATOR 4700PF 50V 10ST KONDENSATOR 3300PF 50V 10ST KONDENSATOR 1000PF 50V 10ST KONDENSATOR 1000pF0V 10ST KONDENSATOR 10000PF KONDENSATOR 10000PF
|
Bourns, Inc. NXP Semiconductors N.V.
|
APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|
GRM31MF51A106ZA01 GRM31XR61A335KC12 GRM21BR71E334K |
High Dielectric Constant Type 6.3/16/25/50V 高介电常数型6.3/16/25/50V
|
Electronic Theatre Controls, Inc. Murata Manufacturing Co., Ltd. Coilcraft, Inc.
|
APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|