| PART |
Description |
Maker |
| 2N2484HR 2N2484HRG 2N2484HRT 2N2484UB1 2N2484UBG 2 |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A
|
ST Microelectronics
|
| 2N5551HRT 2N5551SHRT 2N5551RUBG 2N5551RUBT J2N5551 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A
|
ST Microelectronics
|
| 2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SEME-LAB[Seme LAB]
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N2907ARHRG 2N2907ARHRT 2N2907AHR 2N2907AHRT 2N290 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A
|
ST Microelectronics
|
| 2N2905AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A
|
STMicroelectronics
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRGVH50F |
INSULATED GATE BIPOLAR TRANSISTOR
1200V DISCRETE Hi-Rel IGBT in a TO-258AA package
|
International Rectifier
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| AT-32032 AT-32032-TR2 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323
Microcurrent transistors for battery operations
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
|
Agilent(Hewlett-Packard)
|
