| PART |
Description |
Maker |
| W3EG2128M72AFSR403AD3XG W3EG2128M72AFSR262AD3XG W3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA
|
WEDC[White Electronic Designs Corporation]
|
| WV3DG72256V-AD2 W3DG72256V10AD2I-MG W3DG72256V10AD |
2GB - 2x128Mx72 SDRAM, REGISTERED
|
WEDC[White Electronic Designs Corporation]
|
| W3HG2128M72ACER665AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
|
White Electronic Designs Corporation
|
| W3EG2128M64ETSR335JD3XG W3EG2128M64ETSRXXXJD3SG W3 |
2GB - 2x128Mx64 DDR SDRAM REGISTERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD525G726ALS4-H HYMD525G726ALS4-K HYMD525G726ALS |
DDR SDRAM - Registered DIMM 2GB
Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| W3EG72256S335JD3 W3EG72256MS100AJD3MF W3EG72256MS1 |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns.
DDR SDRAM Specification Version 0.61
128Mb DDR SDRAM
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NT512D72S4PA0GR-75B NT512D72S4PA0GR-7K NT512D72S4P |
256Mb: 64Mx72; unbuffered DDR SDRAM module based on 64Mx4 DDR SDRAM
|
NANYA
|
| M383L2828CT1 |
M383L2828CT1 DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
