PART |
Description |
Maker |
ATF54143 ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-54143-TR2 ATF-54143-BLK ATF-54143-TR1 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
HP[Agilent(Hewlett-Packard)]
|
ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK |
ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard) ETC[ETC]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
EXC-24CB102U EXC24CP121U EXC24CP121U-12 EXC24CP221 |
2 mode Noise Filters 2 mode Noise Filters Burst/radiation noise fi ltering for audio circuits
|
Panasonic Semiconductor
|
IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances From old datasheet system N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation] IXYS, Corp.
|
ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY 20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
MAX851 MAX851ESA MAX851ISA MAX850 MAX850ESA MAX850 |
Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. 100kHz chage-pump switching frequency. Logic-level shutdown mode: 1microA max over temp. Low-Noise, Regulated, Negative Charge-Pump Power Supplies for GaAsFET Bias 低噪声、稳压型、负输出电荷泵,用于GaAsFET偏置电源 Quadruple 2-Input Positive-AND Gates 20-LCCC -55 to 125 Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias Low-Noise / Regulated / Negative Charge-Pump Power Supplies for GaAsFET Bias
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
|
MAX6341CPA MAX6341CSA MAX6341EPA MAX6341ESA MAX634 |
Stereo 2-W Audio Power Amp with 4 Selectable Gain Settings and MUX Control 24-HTSSOP -40 to 85 1ppm/C / Low-Noise / 2.5V/ 4.096V/ 5V Voltage References 1ppm/C, Low-Noise, 2.5V/ 4.096V/ 5V Voltage References 1ppm/∑C, Low-Noise, 2.5V/ 4.096V/ 5V Voltage References 1ppm/C Low-Noise 2.5V/ 4.096V/ 5V Voltage References 1ppm/°C, Low-Noise, 2.5V/ 4.096V/ 5V Voltage References 1ppm/??, Low-Noise, 2.5V/ 4.096V/ 5V Voltage References From old datasheet system
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
|
491LP3E HMC491LP3E HMC491LP309 |
GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.4 - 3.8 GHz
|
Hittite Microwave Corporation
|
DMP3160LQ-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
|
TY Semiconductor Co., Ltd
|