| PART |
Description |
Maker |
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| ALN0839AT |
Internally Matched LNA Module
|
Advanced Semiconductor Business Inc.
|
| FLM4450-8F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM0910-4F |
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| ALN1951 |
Internally Matched LNA Module
|
Advanced Semiconductor Business Inc.
|
| ALN1951BT |
Internally Matched LNA Module
|
Advanced Semiconductor Business Inc.
|
| ALN1952 |
Internally Matched LNA Module
|
Advanced Semiconductor Business Inc.
|
| FLM1011-15F |
X,Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
