| PART |
Description |
Maker |
| TGS2306-EPU |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor,Inc.
|
| PE7113 |
SMA FEMALE COAXIAL SWITHCH FREQUENCY RANGE: 1GHz 18GHz SWITCH TYPE: SPDT
|
Pasternack Enterprises, Inc...
|
| PE6039 |
N FEMALE HIGH POWER TERMINATION FREQUENCY RANGE: DC TO 18GHz
|
Pasternack Enterprises, Inc.
|
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| TPD02-01G18BS |
1-18GHz 2-Way Power Divider
|
Transcom, Inc.
|
| TPD02-0.5G18S |
0.5-18GHz 2-Way Power Divider
|
Transcom, Inc.
|
| UPG2010TB UPG2010TB-E3 |
High power single control L-band SPDT switch.
NEC’s HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
NECs HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC
ETC
California Eastern Laboratories
|
| PDW06407 |
2-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| PDW06011 |
6-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
