| PART |
Description |
Maker |
| CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM
2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| M14256 |
Memory Card IC 256K Bit Serial IIC Bus EEPROM(256K位串行IIC总线EEPROM)
|
意法半导
|
| GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
| M295V160BB70N1T M29F160 M295V160BB55N1T M295V160BT |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PLCC -25 to 85
16-Bit Bus Transceiver with 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory 16兆位Mb x81兆x16插槽，启动座单电源闪
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16-Bit Transparent D-Type Latch With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| GS71108AGP-10 GS71108AGP-10I GS71108AGP-12 GS71108 |
128K x 8 1Mb Asynchronous SRAM
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| R1LP0108ESA-5SI R1LP0108ESF-7SR R1LP0108ESF-7SI R1 |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| EN29F010 EN29F010-70JCP EN29F010-90JIP EN29F010-55 |
1 Megabit (128K x 8-bit) 5V Flash Memory
|
ETC
Eon Silicon Solution Inc.
|
