PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
|
SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler 1.5GHz 10 Prescaler 1.5GHz ± 10 Prescaler MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
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Mitel Semiconductor MITEL[Mitel Networks Corporation]
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2SK528 |
Drain Current ?ID=2A@ TC=25C
|
Inchange Semiconductor ...
|
2SK846 |
Drain Current ?ID=3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1171 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1601 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1602 |
Drain Current ?ID= 2.8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK753 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK529 |
Drain Current ?ID=2A@ TC=25C
|
Inchange Semiconductor ...
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