| PART |
Description |
Maker |
| 2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|20VAR
Low Frequency Transistor (60V, 3A)
Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc.
Rohm CO.,LTD.
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| 2SC4957 2SC4957-T1 2SC4957-T2 2SC4957NE68539E 2SC4 |
Microwave low-noise amplification silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 高频低噪声放大器NPN硅外延晶体管4个引脚微型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC, Corp.
NEC Corp.
|
| 2SD269609 2SD2696T2L |
Low frequency transistor (for amplification)
400 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
| EMX28 |
Low frequency transistor, complex (2-elements) Bipolar Transistor
|
Rohm CO.,LTD.
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SB631 2SB631K 2SD600 2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SD1695 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
