| PART |
Description |
Maker |
| BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor
|
ST Microelectronics
|
| AUIRG4PH50S |
INSULATED GATE BIPOLAR TRANSISTOR
57 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
International Rectifier
|
| MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| RM60DZ-24 RM60DZ-2H RM60CZ-24 RM60CZ-2H |
60 A, 1200 V, SILICON, RECTIFIER DIODE
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE 高压中功率常规使用绝缘型
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
|
| IRG4PSH71UDPBF |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| IRG4PH40UD2-E IRG4PH40UD2-EPBF |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
|
IRF[International Rectifier]
|
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| SDR1212CTJ SDR1210CTJ SDR1212DRJ |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
