PART |
Description |
Maker |
93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM 2K 5.0V Automotive Temperature Microwire Serial EEPROM Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
3DD15 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
|
Inchange Semiconductor ...
|
2SB503 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)
|
Inchange Semiconductor ...
|
Q62702-C1659 BCX41 BSS64 Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
BF622 Q62702-F1052 |
From old datasheet system NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve... From old datasheet system PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|