PART |
Description |
Maker |
NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
70C80B 70C50B 70C120B 70C60B 70C100B 70C 70C80BF 7 |
Silicon Controlled Rectifier 3-Pin Microprocessor Reset Circuits Silicon Controlled Rectifier 110 A, SCR, TO-208AD
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM) Silicon controlled rectifiers From old datasheet system
|
ST Microelectronics
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase) Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation Microsemi, Corp.
|
ST280CH06C0 ST280CH04C1 |
Silicon Controlled Rectifier, 1130 A, 400 V, SCR, TO-200AB, EPUK-2 Silicon Controlled Rectifier, 1130 A, 600 V, SCR, TO-200AB, EPUK-2 600V 500A Phase Control SCR in a TO-200AA (A-Puk) package
|
Vishay Semiconductors International Rectifier
|
2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
TYN1004 TYN804 |
V(drm): 1000V; silicon controlled rectifier (SCR) V(drm): 800V; silicon controlled rectifier (SCR)
|
SGS Thomson Microelectronics
|
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
15112GOA 15102GOA 15104GOA 15102GOAIL 15110GOA 151 |
Silicon Controlled Rectifier
|
Microsemi Corporation
|