| PART |
Description |
Maker |
| 250925B |
Typical 1dB bandwidth of 9.3 MHz
|
Integrated Technology F...
|
| 211003B |
Typical 1dB bandwidth of 9.8 MHz
|
Integrated Technology F...
|
| 250115B |
Typical 1dB bandwidth of 1.8 MHz
|
Integrated Technology F...
|
| 250926B |
Typical 1dB bandwidth of 9.4 MHz
|
Integrated Technology F...
|
| 250962B |
Typical 1dB bandwidth of 9.2 MHz
|
Integrated Technology F...
|
| 251932B |
Typical 1dB bandwidth of 18.9 MHz
|
Integrated Technology F...
|
| 250960B |
Typical 1dB bandwidth of 9.3 MHz
|
Integrated Technology F...
|
| 250959B |
Typical 1dB bandwidth of 9.2 MHz
|
Integrated Technology F...
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 212006B |
Typical 1dB bandwidth of 20.0 MHz
|
Integrated Technology F...
|
