| PART |
Description |
Maker |
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| T1G4004532-FLEVB1 T1G4004532-FL-15 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MAPRST1214-30UF |
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
|
http://
MACOM[Tyco Electronics]
|
| STK4152 STK4152II |
From old datasheet system
AF Power Amplifier (Split Power Supply) (30W 30W min, THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|
