PART |
Description |
Maker |
RJH60A83RDPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60M0DPQ-E0 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D2DPE-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D2DPP-E0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJQ6015DPM-00T0 RJQ6015DPM-15 |
600V - 18A - IGBT and Diode Application: Inverter
|
Renesas Electronics Corporation
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
RJH60V3BDPP-M0-15 |
600V - 17A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
IRGS8B60K IRGSL8B60K IRGB8B60K |
INSULATED GATE BIPOLAR TRANSISTOR 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
http:// IRF[International Rectifier]
|