| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4R578816869A |
Direct RDRAM?Data Sheet
|
Samsung Electronic
|
| C460DA1000-0327 C460DA1000-0325 C460DA1000-0311 C4 |
Direct Attach LED Technology Rectangular LED RF Performance
LEDs
Direct Attach DA1000 LEDs
|
Cree, Inc
Marktech Corporate
|
| ZIF100 |
Direct Conversion 4 FSK Data Receiver
Direct Conversion 4FSK Data Receiver Target Specification
|
Zarlink Semiconductor Inc.
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| UPA1742TP UPA1742 |
UPA1742TP Data Sheet | Data Sheet[04/2003] UPA1742TP数据表|数据表[04/2003]
SWITCHING N-CHANNEL POWER MOSFET
|
NXP Semiconductors N.V.
NEC
|
| PX0590/28 PX0595/10/28 PX0597 |
EN60 320-1 Standard Sheet C15 Class I & Standard Sheet C16 Class I Hot Condition
|
Elektron Components Ltd.
|
| SL6679TP1N SL6679KG MITELNETWORKSCORPORATION-SL667 |
Direct Conversion FSK Data Receiver
2-7V; direct conversion FSK data receiver. For pagers, including credit card, PCMCIA and watch pagers, low data rate receivers
|
Mitel Semiconductor
|
| UPD16855C UPD16855BG |
UPD16855A/B/C/D Data Sheet | Data Sheet[02/1999] UPD16855A/B/C/D数据表|数据表[02/1999]
DUAL HIGH-SIDE SWITCH FOR USB APPLICATION 双高边开关的USB应用
|
NEC, Corp.
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPC78N12H UPC78N10H UPC78N18H UPC78N05H UPC78N15H |
UPC78N00 Series Data Sheet | Data Sheet[08/1993] UPC78N00系列数据表|数据表[1993分之08]
5.0 AMP POSITIVE VOLTAGE REGULATOR 5.0放大器正电压稳压
THREE TERMINAL POSITIVE VOLTAGE REGULATOR
|
NEC, Corp.
NEC[NEC]
|
