| PART |
Description |
Maker |
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| L2SC3837QLT3G |
High-Frequency Amplifier Transistor Small rbb Cc and high gain.
|
Leshan Radio Company
|
| BUL45D2G |
High Speed, High Gain Bipolar NPN Power Transistor
|
ON Semiconductor
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| BFS481 Q62702-F1572 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| NTE63 |
Silicon NPN Transistor High Gain / Low Noise Amp
Silicon NPN Transistor High Gain, Low Noise Amp
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
NTE[NTE Electronics]
|
| 2SC5178R-T2 2SC5178R-T1 |
High fT, high gain transistor
|
NEC
|
| BUL642D2 BUL642D2G |
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
|
ON Semiconductor
|
