| PART |
Description |
Maker |
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| PC48F4400P0TB0E RC48F4400P0TB0EA JS28F256P33TFA RC |
32M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| LHF16KA1 LH28F160S3NS-L10 |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Electrionic Components
|
| AT45DB161D-TU AT45DB161D-TU-2.5 AT45DB161D-CU AT45 |
TSOP, IND TEMP, GREEN(DATA FLASH) 16M X 1 FLASH 2.7V PROM, PDSO28
|
聚兴科技股份有限公司
Atmel, Corp.
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| MX29LV017BTI-70G MX29LV017BTC-70G |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
|
| MBM29LV160T-80PFTR MBM29LV160B-12PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO48
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Spansion, Inc.
|
| MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| S25FL016A0LMAI011 S25FL016A0LNFI003 S25FL016A0LNFI |
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus 16M X 1 FLASH 3V PROM, PDSO8
|
Spansion, Inc.
SPANSION LLC
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| AT49LV160 AT49BV160 AT49LV161 AT49BV161 |
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
16M bit. 3.0-Volt Read and 3.0-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot
16M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot
16M bit . 2.7-Volt Sectored (Top Boot)
|
ATMEL Corporation
|
