PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G20LS-110 BLF6G20-110 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G21LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|