| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| RKV606KP |
3.34 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVL385CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC355B |
Variable Capacitance Diode for VCO
|
LRC[Leshan Radio Company]
|
| HVD369B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVL381CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD385B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD359 |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD388C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
