PART |
Description |
Maker |
NB7L1008M |
Multi-Level Inputs w/ Internal Termination
|
ON Semiconductor
|
ATR0841-PFQG |
4-channel Laser Driver with 2 Outputs, 3 LVDS Inputs and Internal Termination
|
Atmel Corp.
|
NB6L11M_07 NB6L11M NB6L11MMNG NB6L11MMNR2G NB6L11M |
2.5V / 3.3V 1:2 Differential CML Fanout Buffer Multi−Level Inputs w/ Internal Termination
|
ONSEMI[ON Semiconductor]
|
L29C520JC22 |
4 x 8-bit multilevel pipeline register. Speed 22 ns
|
LOGIC Devices Incorporated
|
MTC14 74ALVC132 74ALVC132M 74ALVC132MTC 74ALVC132M |
Low Voltage Quad 2-Input NAND Gate with Schmitt Trigger Inputs and 3.6V Tolerant Inputs and Outputs
|
FAIRCHILD[Fairchild Semiconductor]
|
M58LR128HC M58LR128HC70ZB5E M58LR128HC70ZB5U M58LR |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
M58LR128HD70ZB5E M58LR128HD70ZB5U |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
M58LT256JSB M58LT256JST8ZA6T M58LT256JST8ZA6E M58L |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
M58LT256JSB M58LT256JSB8ZA6 M58LT256JST8ZA6 M58LT2 |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
STMicroelectronics
|
NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
M58PR001LE M58PR001LE96ZAC5 M58PR001LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|