| PART |
Description |
Maker |
| MMZ09312B MMZ09312B12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| BFP720 |
C Heterojunction Wideband RF Bipolar Transistor
|
Infineon Technologies AG
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3005NT1 MMG3005NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3H21NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| HMC534LP5 HMC534LP5E |
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
MMIC VCO W/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHZ
|
Hittite Microwave Corporation
|
