PART |
Description |
Maker |
SI9410DY |
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
|
TY Semiconductor Co., L...
|
KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
KDC6020C |
N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m
|
TY Semiconductor Co., Ltd
|
SI4825DY |
P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC ) High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
KI4511DY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压 MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|