PART |
Description |
Maker |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system
|
ONSEMI[ON Semiconductor]
|
AP25G45EM |
N-CHANNEL INSULATED GATE
|
Advanced Power Electronics Corp.
|
AP30G120W |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
MSAHX75L60C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
10N70-C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
AP26G40GEO-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
AP28G40GEO |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
18T10 18T10G-TN3-R 18T10G-TN3-T 18T10L-TN3-R 18T10 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
PPNGZ52F120A PPNHZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
MSAGZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|