| PART |
Description |
Maker |
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| GT40T321 |
IGBT for soft switching applications
|
TOSHIBA
|
| GT40RR21 |
IGBT for soft switching applications
|
TOSHIBA
|
| GT60PR21 |
IGBT for soft switching applications
|
TOSHIBA
|
| IKW75N65ES5-15 |
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5422 EE07952 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLIC
From old datasheet system
|
Toshiba Semiconductor
|
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKQ40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| FD1600R17KF6CB2 |
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
|
Infineon Technologies AG
|
