| PART |
Description |
Maker |
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| DGSS10-06CC |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS, Corp.
|
| EEUEBXXX EEUEB1A101 EEUEB1A101S EEUEB1A221 EEUEB1A |
Aluminum Electronic Capacitor
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 450 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 200 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 220 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 100 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63 V, 3.3 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 1000 uF, THROUGH HOLE MOUNT
KJL 79C 79#22 PIN RECP CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 4.7 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 1000 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 1000 uF, THROUGH HOLE MOUNT
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|
| GN04054N |
Gallium Arsenide Devices
|
Panasonic
|
|
